Publications of Johannes Gooth

Kroder, J.; Manna, K.; Kriegner, D.; Sukhanov, A. S.; Liu, E.; Borrmann, H.; Hoser, A.; Gooth, J.; Schnelle, W.; Inosov, D. S. et al.; Fecher, G. H.; Felser, C.: Spin glass behavior in the disordered half-Heusler compound IrMnGa. Physical Review B 99 (17), 174410, pp. 1 - 10 (2019)

Guin, S. N.; Vir, P.; Zhang, Y.; Kumar, N.; Watzman, S.J.; Fu, C.; Liu, E.; Manna, K.; Schnelle, W.; Gooth, J. et al.; Shekhar, C.; Sun, Y.; Felser, C.: Zero-Field Nernst Effect in a Ferromagnetic Kagome-Lattice Weyl-Semimetal Co₃Sn₂S₂. Advanced Materials, 1806622, pp. 1 - 7 (2019)

Li, G.; Fu, C.; Wu, J.; Rao, J.; Liou, S.-C.; Xu, X.; Shao, B.; Liu, K.; Liu, E.; Kumar, N. et al.; Liu, X.; Fahlman, M.; Gooth, J.; Auffermann, G.; Sun, Y.; Felser, C.; Zhang, B.: Synergistically creating sulfur vacancies in semimetal-supported amorphous MoS₂ for efficient hydrogen evolution. Applied Catalysis B 254, pp. 1 - 6 (2019)

Guin, S. N.; Manna, K.; Noky, J.; Watzman, S. J.; Fu, C.; Kumar, N.; Schnelle, W.; Shekhar, C.; Sun, Y.; Gooth, J. et al.; Felser, C.: Anomalous Nernst effect beyond the magnetization scaling relation in the ferromagnetic Heusler compound Co₂MnGa. NPG Asia Materials 11, 16, pp. 1 - 9 (2019)

Gooth, J.; Borg, M.; Schmid, H.; Bologna, N.; Rossell, M. D.; Wirths, S.; Moselund, K.; Nielsch, K.; Riel, H.: Transition to the quantum hall regime in InAs nanowire cross-junctions. Semiconductor Science and Technology 34 (3), 035028, pp. 1 - 9 (2019)

Noky, J.; Gooth, J.; Felser, C.; Sun, Y.: Characterization of topological band structures away from the Fermi level by the anomalous Nernst effect. Physical Review B 98 (24), 241106, pp. 1 - 5 (2018)

Manna, K.; Muechler, L.; Kao, T.-H.; Stinshoff, R.; Zhang, Y.; Gooth, J.; Kumar, N.; Kreiner, G.; Koepernik, K.; Car, R. et al.; Kübler, J.; Fecher, G. H.; Shekhar, C.; Sun, Y.; Felser, C.: From Colossal to Zero: Controlling the Anomalous Hall Effect in Magnetic Heusler Compounds via Berry Curvature Design. Physical Review X 8 (4), 041045, pp. 1 - 10 (2018)

Jaoui, A.; Fauque, B.; Rischau, C. W.; Subedi, A.; Fu, C.; Gooth, J.; Kumar, N.; Süß, V.; Maslov, D. L.; Felser, C. et al.; Behnia, K.: Departure from the Wiedemann-Franz law in WP₂ driven by mismatch in T-square resistivity prefactors. npj Quantum Materials 3, 64, pp. 1 - 7 (2018)

Xin, J.; Li, G.; Auffermann, G.; Borrmann, H.; Schnelle, W.; Gooth, J.; Zhao, X.; Zhu, T.; Felser, C.; Fu, C.: Growth and transport properties of Mg₃X₂ (X = Sb, Bi) single crystals. Materials Today Physics 7, pp. 61 - 68 (2018)

Gooth, J.; Menges, F.; Kumar, N.; Süß, V.; Shekhar, C.; Sun, Y.; Drechsler, U.; Zierold, R.; Felser, C.; Gotsmann, B.: Thermal and electrical signatures of a hydrodynamic electron fluid in tungsten diphosphide. Nature Communications 9 (1), 4093, pp. 1 - 8 (2018)

Fu, C.; Guin, S. N.; Watzman, S. J.; Li, G.; Liu, E.; Kumar, N.; Süß, V.; Schnelle, W.; Auffermann, G.; Shekhar, C. et al.; Sun, Y.; Gooth, J.; Felser, C.: Large Nernst power factor over a broad temperature range in polycrystalline Weyl semimetal NbP. Energy & Environmental Science 11, pp. 2813 - 2820 (2018)

Wirths, S.; Mayer, B. F.; Schmid, H.; Sousa, M.; Gooth, J.; Riel, H.; Moselund, K. E.: Room-Temperature Lasing from Monolithically Integrated GaAs Microdisks on Silicon. ACS Nano 12 (3), pp. 2169 - 2175 (2018)

Felser, C.; Gooth, J.: Topology and Chirality. In: Chiral Matter: proceedings of the Nobel Symposium 167: Högberga Gård, Lidingö, 28 June-2 July 2021, pp. 115 - 141 (Ed. Babaev, E.). World Scientific Publishing, New Jersey (2023)