Publications of Chandra Shekhar

Meshcheriakova, O.; Köhler, A.; Ouardi, S.; Kondo, Y.; Kubota, T.; Shekhar, C.; Karel, J.; Barbosa, C. V.; Stinshoff, R.; Sahoo, R. et al.; Ueda, S.; Ikenaga, E.; Mizukami, S.; Chadov, S.; Ebke, D.; Fecher, G. H.; Felser, C.: Structural, electronic, and magnetic properties of perpendicularly magnetised Mn₂RhSn thin films. Journal of Physics D: Applied Physics 48, 164008, pp. 1 - 8 (2015)

Nayak, A. K.; Nicklas, M.; Chadov, S.; Khuntia, P.; Shekhar, C.; Kalache, A.; Baenitz, M.; Skourski, Y.; Guduru, V. K.; Puri, A. et al.; Zeitler, U.; Coey, J. M. D.; Felser, C.: Design of compensated ferrimagnetic Heusler alloys for giant tunable exchange bias. Nature Materials 14 (7), pp. 679 - 684 (2015)

Shabbir, B.; Wang, X.; Ghorbani, S. R.; Shekhar, C.; Dou, S.; Srivastava, O. N.: Hydrostatic pressure: A very effective approach to significantly enhance critical current density in granular iron pnictide superconductors. Scientific Reports 5, 8213, pp. 1 - 6 (2015)

Shekhar, C.; ViolBarbosa, C. E.; Yan, B.; Ouardi, S.; Schnelle, W.; Fecher, G. H.; Felser, C.: Evidence of surface transport and weak antilocalization in a single crystal of the Bi₂Te₂Se topological insulator. Physical Review B 90 (16), 165140, pp. 1 - 6 (2014)

Medvedev, S. A.; Naumov, P.; Barkalov, O.; Shekhar, C.; Palasyuk, T.; Ksenofontov, V.; Wortmann, G.; Felser, C.: Structure and electrical resistivity of mixed-valent EuNi₂P₂ at high pressure. Journal of Physics: Condensed Matter 26, 335701, pp. 1 - 5 (2014)

ViolBarbosa, C. E.; Shekhar, C.; Yan, B.; Ouardi, S.; Ikenaga, E.; Fecher, G. H.; Felser, C.: Direct observation of band bending in the topological insulator Bi₂Se₃. Physical Review B 88 (19), 195128, pp. 195128-1 - 195128-4 (2013)

Srivastava, A.; Pal, A.; Singh, S.; Shekhar, C.; Singh, H. K.; Awana, V. P. S.; Srivastava, O. N.: Magnetotransport and thermal properties characterization of 55 K superconductor SmFeAsO_0.85F_0.15. AIP Advances 3 (9), 092113, pp. 092113-1 - 092113-13 (2013)

Shekhar, C.; Nicklas, M.; Nayak, A. K.; Ouardi, S.; Schnelle, W.; Fecher, G. H.; Felser, C.; Kobayashi, K.: Electronic structure and nonsaturating magnetoresistance of superconducting Heusler topological insulators. Journal of Applied Physics 113 (17), 17E142, pp. 17E142-1 - 17E142-3 (2013)

Nayak, A. K.; Nicklas, M.; Chadov, S.; Shekhar, C.; Skourski, Y.; Winterlik, J.; Felser, C.: Large Zero-Field Cooled Exchange-Bias in Bulk Mn₂PtGa. Physical Review Letters 110 (12), 127204, pp. 127204-1 - 127204-5 (2013)

Nayak, A. K.; Nicklas, M.; Shekhar, C.; Felser, C.: Kinetic arrest related to a first-order ferrimagnetic to antiferromagnetic transition in the Heusler compound Mn₂PtGa. Journal of Applied Physics 113 (17), 17E308, pp. 17E308-1 - 17E308-3 (2013)

Shekhar, C.; Ouardi, S.; Nayak, A. K.; Fecher, G. H.; Schnelle, W.; Felser, C.: Ultrahigh mobility and nonsaturating magnetoresistance in Heusler topological insulators. Physical Review B 86 (15), 155314, pp. 155314-1 - 155314-5 (2012)

Shekhar, C.; Ouardi, S.; Fecher, G. H.; Nayak, A. K.; Felser, C.; Ikenaga, E.: Electronic structure and linear magnetoresistance of the gapless topological insulator PtLuSb. Applied Physics Letters 100 (25), 252109, pp. 252109-1 - 252109-4 (2012)

Nayak, A. K.; Shekhar, C.; Winterlik, J.; Gupta, A.; Felser, C.: Mn₂PtIn: A tetragonal Heusler compound with exchange bias behavior. Applied Physics Letters 100 (15), 152404, pp. 152404-1 - 152404-4 (2012)

Kang, J. H.; Petrides, I.; Roychowdhury, S.; Shekhar, C.; Felser, C.; Narang , P.; Wong, C. W.: Effects of Magnetic Ordering on A-mode Peaks using Raman Spectroscopy in Magnetic Topological Material EuCd₂As₂. In: CLEO: Science and Innovations: part of Conference on Lasers & Electro-Optics, 5-10 May 2024, Charlotte, North Carolina, United States, FF2C.4. (2024)

Houver, S.; Soranzio, D.; Biasco, S.; Shekhar, C.; Felser, C.; Abreu, E.; Savoini, M.; Johnson, S. L.: THz-induced carrier multiplication in TaAs Weyl semimetal. In: 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 17-22 Sept. 2023, pp. 1 - 2. IEEE (2023)